| PART |
Description |
Maker |
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| LH28F160S3 LH28F160S3-L10 LH28F160S3-L13 LH28F160S |
LH28F160S3NS-L150 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP
LH28F160S3HT-L130 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin TSOP
LH28F160S3D-L100 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP
LH28F160S3HNS-L120 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP
LH28F160S3HNS-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP
LH28F160S3HD-L13 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP
LH28F160S3HD-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP
LH28F160S3HB-L130 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP
LH28F160S3HB-L120 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP
LH28F160S3HB-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP
16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
16-MBIT (2MBx8/1MBx16) Smart 3 Flash MEMORY
LH28F160S3HB-L100 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP
LH28F160S3HB-L13 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP
LH28F160S3HB-L150 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP
LH28F160S3HD-L120 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP
LH28F160S3HD-L150 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP
LH28F160S3HNS-L100 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP
LH28F160S3D-L13 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP
LH28F160S3R-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin TSOP
LH28F160S3HR-L120 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin TSOP
|
SHARP[Sharp Electrionic Components]
|
| KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| LHF16KA6 LH28F160S3T-L10 LH28F160S3T-L10A |
Flash Memory 16M (2MB 8/1MB 16) 闪存16M内存MB的/1MB6
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
|
| GS71216TP GS71216TP-10 GS71216TP-10I GS71216TP-8 G |
10ns 64K x 16 1Mb asynchronous SRAM
8ns 64K x 16 1Mb asynchronous SRAM
|
GSI[GSI Technology]
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| MT58L32L32D MT58L32L36D MT58L64L18D |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器) 32KX82,3.3 O的流水线，双氰胺SyncBurst的SRAM兆，3.3V的输输出，流水线式，双循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
Micrel Semiconductor, Inc.
|
| 27C801 M27C801 M27C801-100B1TR M27C801-100B1X M27C |
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM
|
STMICROELECTRONICS [STMicroelectronics]
ST Microelectronics
|
| 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4，银
|
http://
Maxwell Technologies, Inc
|
| K4S640432F-TL75 K4S640432F K4S640432F-TC1H K4S6404 |
4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| DSM2180F3VNBSP |
1Mb Flash(3V), PLD, up to 16 I/O
|
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